2sK3709 no.8023-1/4 features ? low on-resistance. ? 4v drive. ? motor driver, dc / dc converter. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 100 v gate-to-source voltage v gss 20 v drain current (dc) i d 37 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 148 a allowable power dissipation p d 2.0 w tc=25 c35w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche enargy (single pulse) *1 e as 427 mj avalanche current *2 i av 37 a *1 v dd =20v, l=500 m h, i av =37a *2 l 500 m h, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 100 v zero-gate voltage drain current i dss v ds =100v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =19a 25 36 s static drain-to-source on-state resistance r ds (on)1 i d =19a, v gs =10v 19 25 m w r ds (on)2 i d =19a, v gs =4v 23 32 m w continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8023 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 21405qa ts im tb-00000494 2sK3709 n-channel silicon mosfet general-purpose switching device applications
2sK3709 no.8023-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =20v, f=1mhz 6250 pf output capacitance coss v ds =20v, f=1mhz 440 pf reverse transfer capacitance crss v ds =20v, f=1mhz 380 pf turn-on delay time t d (on) see specified test circuit. 45 ns rise time t r see specified test circuit. 115 ns turn-off delay time t d (off) see specified test circuit. 500 ns fall time t f see specified test circuit. 180 ns total gate charge qg v ds =50v, v gs =10v, i d =37a 117 nc gate-to-source charge qgs v ds =50v, v gs =10v, i d =37a 20 nc gate-to-drain miller charge qgd v ds =50v, v gs =10v, i d =37a 25.8 nc diode forward voltage v sd i s =37a, v gs =0 0.97 1.2 v marking : K3709 package dimensions unit : mm 2063a switching time test circuit unclamped inductive test circuit 1 : gate 2 : drain 3 : source sanyo : to-220ml 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.55 2.55 2.4 4.5 2.8 0.7 2.55 2.55 2.4 1 23 pw=10 m s d.c. 1% p. g 50 w g s d i d =19a r l =2.63 w v dd =50v v out 2sK3709 v in 10v 0v v in 50 w 3 50 w dut v dd l 10v 0v
2sK3709 no.8023-3/4 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w case temperature, tc -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a drain current, i d -- a switching time, sw time -- ns gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- tc sw time -- i d i f -- v sd ? y fs ? -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it07352 it07353 0 4.5 0.5 it07354 it07355 2 5 50 45 40 10 345678 --50 --25 0 25 50 75 100 125 150 9 0 0 70 60 50 40 30 20 4.0 3.0 3.5 1.0 2.0 0.5 1.5 2.5 10 0 70 60 50 40 30 20 10 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10v 6v 4v 35 25 15 30 20 10 5 50 45 40 35 25 15 30 20 10 i d =19a tc= 75 c --25 c 25 c i d = 19 a, v gs =4v i d = 19 a, v gs =10v tc=25 c v gs =3v v ds =10v tc= --25 c --25 c 25 c 25 c 75 c tc=75 c it07358 it07357 0 0.3 0.6 0.9 1.5 1.2 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 100 7 5 3 2 it07356 25 c --25 c tc=75 c 1.0 0.1 23 57 23 57 10 23 57 100 10 2 3 5 7 100 2 3 5 7 1.0 v ds =10v 25 c tc= --25 c 75 c v gs =0 100 1000 3 5 7 3 2 5 7 0.1 1.0 23 57 23 57 7 23 5 10 v dd =50v v gs =10v t d (off) t r t d (on) 0 7 1000 10000 7 5 3 2 5 3 2 30 5 152025 10 it07359 f=1mhz ciss coss crss t f
2sK3709 no.8023-4/4 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2005. specifications and information herein are subject to change without notice. total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w a s o v gs -- qg p d -- ta p d -- tc 10 2 3 5 7 2 3 5 7 100 2 3 2 3 5 7 1.0 0.1 23 57 23 57 23 57 0.1 1.0 10 100 2 it07361 it07360 0 0 20 40 0.5 60 1.5 1.0 80 100 120 2.0 2.5 140 160 it07362 0 0 20 40 5 60 15 10 80 100 120 20 40 25 30 35 140 160 it07363 0 0 1 2 3 4 5 6 7 8 120 100 80 10 9 20 40 60 operation in this area is limited by r ds (on). 10 m s 100 m s 1ms 10ms 100ms i d =37a i dp =148a dc operation v ds =50v i d =37a <10 m s tc=25 c single pulse note on usage : since the 2sK3709 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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